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| APT50M80B2VR APT50M80LVR POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. T-MaxTM 500V 58A 0.080 TO-264 * Identical Specifications: T-MAXTM or TO-264 Package * Faster Switching * Lower Leakage * Avalanche Energy Rated G S D MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT50M80B2VR _ LVR UNIT Volts Amps 500 58 232 30 40 625 5.0 -55 to 150 300 58 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 500 0.080 25 250 100 2 4 (VGS = 10V, 29A) Ohms A nA Volts 12-2003 050-5916 Rev A Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT50M80B2VR_LVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 58A @ 25C VGS = 15V VDD = 250V ID = 58A @ 25C RG = 0.6 MIN TYP MAX UNIT 8797 1286 562 423 41 214 14 25 64 23 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns C 58 232 1.3 680 17.0 (Body Diode) (VGS = 0V, IS = -58A) Reverse Recovery Time (IS = -58A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -58A, dl S/dt = 100A/s) THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.20 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.78mH, R = 25, Peak I = 58A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 , THERMAL IMPEDANCE (C/W) 0.20 0.9 0.15 0.7 0.5 12-2003 0.10 Note: PDM t1 t2 0.3 0.05 0.1 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2 050-5916 Rev A Z JC Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 160 ID, DRAIN CURRENT (AMPERES) Junction temp. (C) RC MODEL APT50M80B2VR_LVR 15 &10V 7V 140 120 100 80 60 5V 40 4.5V 20 4V 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0.0302 0.00809F 6V Power (watts) 5.5V 0.0729 0.0182F 0.0955 Case temperature. (C) 0.264F 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 90 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 1.4 NORMALIZED TO V = 10V @ 29A GS 80 70 60 50 40 30 20 10 0 TJ = -55C TJ = +25C TJ = +125C 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 1.3 1.2 1.1 VGS=10V 1.00 0.90 0.80 VGS=20V 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 60 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 1.15 1.10 50 40 30 20 10 0 1.05 1.00 0.95 0.90 0.85 -50 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.5 I V D = 29A = 10V GS VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 2.0 1.1 1.0 0.9 0.8 0.7 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.6 -50 050-5916 Rev A 12-2003 APT50M80B2VR_LVR 232 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 30,000 100 C, CAPACITANCE (pF) 10,000 Ciss 100S 10 1mS TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D 1,000 Coss Crss 10mS 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 100 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 = 58A 200 100 12 VDS=100V TJ =+150C TJ =+25C 10 8 VDS=250V VDS=400V 4 100 200 300 400 500 600 700 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE T-MAXTM(B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 12-2003 Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) Gate Drain Source 2.21 (.087) 2.59 (.102) 050-5916 Rev A 5.45 (.215) BSC 2-Plcs. 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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